About the P–N Junction Diode simulation
Join p-type and n-type silicon and electrons and holes diffuse across the junction and recombine, leaving a thin depletion layer of fixed ions with no free carriers. The ions' field creates a barrier potential — about 0.7 V for silicon and 0.3 V for germanium. Forward bias lowers the barrier and current rises steeply; reverse bias widens the layer and only a tiny leakage current flows, until breakdown.
In this p–n junction diode simulation you set the battery to forward, unbiased or reverse, change its voltage and the series resistor, and watch the depletion layer, the carriers and the ammeter. The I–V characteristic screen plots the curve with a load line and operating point for silicon, germanium, a Zener and an LED. It covers Semiconductor Electronics in Class 12, JEE and NEET.
Also covers: diode, p-n junction, forward bias, reverse bias, depletion layer, barrier potential, I-V characteristic, Zener diode, LED, knee voltage, rectifier.




